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CFY67 Schematic ( PDF Datasheet ) - Infineon Technologies AG

Teilenummer CFY67
Beschreibung HiRel K-Band GaAs Super Low Noise HEMT
Hersteller Infineon Technologies AG
Logo Infineon Technologies AG Logo 




Gesamt 9 Seiten
CFY67 Datasheet, Funktion
CFY67
HiRel K-Band GaAs Super Low Noise HEMT
HiRel Discrete and Microwave Semiconductor
Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
For professional super low-noise amplifiers
For frequencies from 500 MHz to > 20 GHz
Hermetically sealed microwave package
Super low noise figure, high associated gain
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1699
on request
on request
Q62702F1699
Semiconductor Group
1 of 10
Draft D, September 99






CFY67 Datasheet, Funktion
CFY67
Typical Common Source S-Parameters (continued)
f
[GHz]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
|S11|
[mag]
0,962
0,937
0,913
0,889
0,860
0,834
0,810
0,784
0,761
0,740
0,720
0,701
0,682
0,663
0,644
0,627
0,611
0,595
0,581
0,567
0,556
0,546
0,537
0,528
0,520
0,513
0,506
0,498
0,492
0,489
0,484
0,485
0,485
0,485
0,487
0,490
<S11
[ang]
-13
-22
-33
-41
-51
-61
-71
-80
-90
-99
-107
-116
-124
-131
-139
-148
-157
-165
-173
178
170
163
155
149
142
135
128
121
113
106
98
91
83
75
69
64
CFY67-06: VDS = 2 V, ID = 15 mA, Zo = 50
|S21| <S21 |S12| <S12 |S22| <S22
[mag] [ang] [mag] [ang] [mag] [ang]
6,112 166 0,0111 76 0,539 -15
5,956 159 0,0211 69 0,525 -19
5,810 150 0,0302 64 0,511 -24
5,690 142 0,0394 58 0,498 -30
5,522 133 0,0484 53 0,484 -36
5,386 124 0,0567 48 0,469 -43
5,236 116 0,0637 43 0,456 -49
5,067 107 0,0702 38 0,440 -55
4,911 99 0,0760 33 0,423 -61
4,752 91 0,0809 28 0,410 -67
4,586 84 0,0851 24 0,397 -73
4,420 76 0,0889 19 0,385 -79
4,260 69 0,0918 15 0,373 -84
4,107 62 0,0941 11 0,362 -89
3,974 55 0,0962 7 0,351 -93
3,852 49 0,0980 3 0,343 -98
3,747 42 0,0995 -1 0,333 -102
3,659 35 0,1008 -5 0,323 -107
3,571 29 0,1022 -9 0,313 -112
3,497 22 0,1039 -13 0,303 -116
3,430 16 0,1049 -17 0,293 -121
3,368 9 0,1064 -21 0,284 -127
3,317 3 0,1078 -26 0,274 -131
3,265 -4 0,1093 -30 0,265 -135
3,216 -10 0,1105 -35 0,255 -139
3,169 -17 0,1116 -39 0,246 -143
3,120 -24 0,1126 -44 0,235 -146
3,080 -30 0,1137 -49 0,225 -150
3,044 -37 0,1151 -54 0,215 -155
3,014 -44 0,1160 -59 0,207 -159
2,990 -51 0,1171 -65 0,200 -163
2,967 -58 0,1185 -71 0,193 -167
2,945 -65 0,1197 -77 0,187 -171
2,947 -71 0,1206 -82 0,182 -175
2,961 -77 0,1215 -87 0,177 -178
2,979 -81 0,1230 -90 0,174 179
k-Fact. S21/S12
[mag] [dB]
0,42 27,4
0,42 24,5
0,44 22,8
0,46 21,6
0,48 20,6
0,50 19,8
0,52 19,1
0,55 18,6
0,58 18,1
0,60 17,7
0,63 17,3
0,66 17,0
0,69 16,7
0,73 16,4
0,77 16,2
0,80 15,9
0,83 15,8
0,86 15,6
0,90 15,4
0,92 15,3
0,95 15,1
0,98 15,0
1,00 14,9
1,02 14,8
1,05 14,6
1,07 14,5
1,10 14,4
1,12 14,3
1,14 14,2
1,15 14,1
1,16 14,1
1,17 14,0
1,17 13,9
1,17 13,9
1,16 13,9
1,14 13,8
MAG
[dB]
13,8
13,3
12,9
12,5
12,2
12,0
11,8
11,6
11,5
11,4
11,4
11,5
11,6
Semiconductor Group
6 of 10
Draft D, September 99

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