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CFH800 Schematic ( PDF Datasheet ) - ETC

Teilenummer CFH800
Beschreibung Typical Common Source S - Parameters
Hersteller ETC
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Gesamt 7 Seiten
CFH800 Datasheet, Funktion
P - HEMT
CFH800
________________________________________________________________________________________________________
Preliminary Datasheet
Features
Low noise figure and high associated gain for
high IP3 receiver stages up to 4GHz
Suitable for PCS CDMA and UMTS applications
(F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)
Low cost miniature package SOT343
LG = 0.4µm; WG = 800µm
Tape and Reel packaging
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
Type
CFH 800
Marking
N8s
Ordering code
(taped)
on request
Package 1)
SOT343
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < tbd°C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
Thermal resistance
Channel-soldering point source
RthChS
1) Dimensions see page 7
2) TS: Temperature measured at soldering point
5.5
6.5
-2.0
160
150
-65...+150
350
198
Unit
V
V
V
mA
°C
°C
mW
K/W
Infineon Technologies
pg. 1/7
01.03.2002
WS GS CE GaAs






CFH800 Datasheet, Funktion
P - HEMT
CFH800
________________________________________________________________________________________________________
Typical Common Source S – Parameters
@ 5V; 50mA; Zo = 50
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
0.1
0.9304 -23.8 20.5744 162.4 0.0224
99.5 0.4514 -30.4
0.2
0.8794 -34.8 19.5344
155 0.028
78.6 0.4204
-41
0.3
0.8331 -51.1 18.1654 144.2 0.0388
64.1 0.3928 -57.1
0.4
0.7848 -66.2 16.6331 134.5 0.0451
58.3 0.3777 -71.1
0.5 0.7407 -79.4 15.0631 126.5 0.0519
56 0.3613 -83.4
0.6
0.7021 -91.1 13.6278 119.6 0.0564
52.8 0.3467 -94.6
0.7
0.6735 -101.2 12.3385 113.5 0.0602
51.2 0.3358 -104.2
0.8 0.6475 -110.5 11.2236 108.2 0.0638
50 0.3252 -113.1
0.9 0.6272 -118.7 10.2679 103.5 0.0675
50 0.3148 -120.6
1
0.6112 -126.5 9.4523
99.4 0.0712
49.1 0.3054 -128.5
1.1
0.6001 -133.2 8.7468
95.6 0.0735
48 0.296 -135.3
1.2 0.5925 -139.6 8.1191
92 0.0765
48.1 0.2882 -142.2
1.3
0.5881 -144.9 7.5775
88.7 0.0788
47.9 0.2813 -148.2
1.4
0.5854
-150 7.0782
85.6 0.0824
48.2 0.2768 -154.7
1.5
0.5851 -154.6 6.6593
82.4 0.0847
48.2 0.275 -160.4
1.6
0.5855 -159.2 6.2687
79.4 0.0877
48.4 0.2741 -166.6
1.7
0.5877 -163.2 5.921
76.6 0.0891
48.6 0.2766 -172.2
1.8
0.589 -167.1 5.5885
74.1 0.091
48.8 0.2803
-178
1.9
0.5924 -170.9 5.2758
71.4 0.0921
49.1 0.2885 177.1
2
0.5962 -174.4 5.0084
69 0.0953
49.1 0.295 172.2
2.1
0.6024 -177.6 4.7644
66.8 0.0986
48.8 0.3049 168.1
2.2
0.6069 179.6 4.5556
64.6 0.1016
48.9 0.3143
164
2.3
0.6123 176.6 4.351
62.3 0.1045
49.4 0.3278 160.9
2.4
0.6156
174 4.1578
59.8 0.1065
49.6 0.338 158.1
2.5
0.618
171 3.9735
57.7 0.1088
49.4 0.3511 155.9
3
0.6359 160.1 3.238
48.8 0.119
50.2 0.4005 147.7
3.5
0.6397 150.2 2.7451
40.4 0.1285
52.1 0.4286 143.1
4
0.6464 141.4 2.4056
33.1 0.1404
54.1 0.4319 140.4
4.5
0.6341 134.1 2.1792
25.5 0.1573
55.6 0.421 136.8
5
0.6227 126.4 2.0069
17.3 0.1778
55.2 0.4123 131.3
5.5
0.627
120 1.8774
7.7 0.1994
51.8 0.4089 123.4
6
0.6456 112.5 1.7629
-2.4 0.2098
46.9 0.4157 110.2
Typical Common Source Noise – Parameters
@ 5V; 50mA; Zo = 50
f[GHz]
0.9
1.8
2.4
3.0
Fmin [dB]
0.44
0.53
0.59
0.69
Ga [dB]
21.3
16.9
14.1
12.3
Mag opt ) Phase(Γopt) [deg]
0.32 44
0.45 122
0.47 144
0.44 178
Rn/50
0.08
0.07
0.07
0.06
Infineon Technologies
pg. 6/7
01.03.2002
WS GS CE GaAs

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