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PDF CF739 Data sheet ( Hoja de datos )
| Número de pieza | CF739 | |
| Descripción | GaAs FET (N-channel dual-gate GaAs MES FET) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CF739 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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GaAs FET
CF 739
Features
q N-channel dual-gate GaAs MES FET
q Depletion mode transistor for tuned small-signal
applications up to 2 GHz, e. g. VHF, UHF,
Sat-TV tuners
q Low noise
q High gain
q Low input capacitance
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CF 739
Marking
MS
Ordering Code
(tape and reel)
Q62702-F1215
Pin Configuration
1 2 34
S D G2 G1
Package1)
SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Gate 1-source peak current
Gate 2-source peak current
Total power dissipation, TS ≤ 66 ˚C2)
Channel temperature
Storage temperature range
Symbol
VDS
– VG1S
– VG2S
ID
+ IG1SM
+ IG2SM
Ptot
Tch
Tstg
Values
Unit
10 V
6
6
80 mA
1
1
240 mW
150 ˚C
– 55 … + 150
Thermal Resistance
Channel - soldering point3)
RthchS
≤ 350
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the source lead at the soldering point to the pcb.
Semiconductor Group
1
04.96
1 page  
CF 739
Common Source Admittance Parameters, G2 RF grounded
Gate 1 input admittance y11s
VDS = 5 V, VG2S = 2 V, ID = 10 mA
Gate 1 forward transfer admittance y21s
VDS = 5 V, VG2S = 2 V, ID = 10 mA
Output admittance y22s
VDS = 5 V, VG2S = 2 V, ID = 10 mA
Semiconductor Group
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CF739.PDF ] | |
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