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C2655 Schematic ( PDF Datasheet ) - Toshiba

Teilenummer C2655
Beschreibung NPN Transistor - 2SC2655
Hersteller Toshiba
Logo Toshiba Logo 




Gesamt 2 Seiten
C2655 Datasheet, Funktion
2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications
Power Switching Applications
Industrial Applications
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High collector power dissipation: PC = 900 mW
High-speed switching: tstg = 1.0 µs (typ.)
Complementary to 2SA1020.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
50
50
5
2
0.5
900
150
55 to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
1





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