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Teilenummer | C2655 |
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Beschreibung | NPN Transistor - 2SC2655 | |
Hersteller | Toshiba | |
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Gesamt 2 Seiten 2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications
Power Switching Applications
Industrial Applications
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SA1020.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
50
50
5
2
0.5
900
150
−55 to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
1
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ C2655 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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C2655 | NPN Transistor - 2SC2655 | Toshiba |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |