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PDF CEG9926 Data sheet ( Hoja de datos )
| Número de pieza | CEG9926 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Chino-Excel Technology | |
| Logotipo |  |
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CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V.
RDS(ON)=40mΩ @VGS=2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D1 1
S1 2
S1 3
TSSOP-8 for Surface Mount Package.
G1 4
8 D2
7 S2
6 S2
5 G2
ȀȀȀ
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
9
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa
-Pulsed b
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
Ć8
Ć4.5
Ć25
1.7
ȑȎȐ
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
125
C/W
9-17
1 page  
CEG9926
4
VDD
RL
VIN
D VOUT
VGS
RGEN G
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
90%
S
VIN 50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
10 0
D=0.5
0.2
10-1 0.1
0.05
0.02
10-2 0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
10 0
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
3. TJM-TA = P* RįJA (t)
4. Duty Cycle, D=t1/t2
1
10
Figure 13. Normalized Thermal Transient Impedance Curve
10 2
9
9-21
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CEG9926.PDF ] | |
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