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Teilenummer | D45C2 |
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Beschreibung | Silicon PNP Power Transistors | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
D45C2
DESCRIPTION
·Low Saturation Voltage
·Good Linearity of hFE
·Fast Switching Speeds
·Complement to Type D44C2
APPLICATIONS
·Designed for various specific and general purpose application
such as: output and driver stages of amplifiers operating at
frequencies from DC to greater than 1.0MHz series, shunt
and switching regulators; low and high frequency inverters/
converters and many others.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
-40 V
VCEO
Collector-Emitter Voltage
-30 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
ICM Collector Current-Peak
-6 A
IB Base Current-Continuous
Collector Power Dissipation
PC @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-1 A
30 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
4.2 ℃/W
isc website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ D45C2 Schematic.PDF ] |
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