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Teilenummer | 35N08 |
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Beschreibung | N-Channel MOSFET Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
35N08
·FEATURES
·Drain Current ID= 35A@ TC=25℃
·Drain Source Voltage-
: VDSS= 80V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.055Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
80
±30
V
V
ID Drain Current-Continuous
35 A
IDM Drain Current-Single Plused
100 A
PD Total Dissipation @TC=25℃
150 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.83 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 35N08 Schematic.PDF ] |
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