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PDF DMN65D8LFB Data sheet ( Hoja de datos )
| Número de pieza | DMN65D8LFB | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes | |
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DMN65D8LFB
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V(BR)DSS
60V
RDS(ON)
3.0Ω @ VGS = 10V
4.0Ω @ VGS = 5V
ID
TA = +25°C
400mA
330mA
Features and Benefits
N-Channel MOSFET
Low On-Resistance
Low Gate-Threshold Voltage
Low-Input Capacitance
Fast Switching Speed
Small-Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power-management applications.
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
ESD PROTECTED TO 1.2kV
X1-DFN1006-3
Bottom View
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
S
D
G
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN65D8LFB-7
DMN65D8LFB-7B
Case
X1-DFN1006-3
X1-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
DMN65D8LFB
Document number: DS35545 Rev. 4 - 2
1 of 6
www.diodes.com
May 2015
© Diodes Incorporated
1 page  
1
0.1
0.01
TA=125°C
TA=150°C
TA=85°C
TA=25°C
TA=-55°C
DMN65D8LFB
0.001
0
0.2 0.4 0.6 0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Diode Forward Voltage vs. Current
1.2
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
E b2
L2
D
Pin #1 ID
A1
Seating Plane
b
e
z
L3 L1
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0.00 0.05 0.03
b 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e - - 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 - - 0.40
z 0.02 0.08 0.05
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
YC
Y1
G2
X G1
X1
Dimensions
C
G1
G2
X
X1
Y
Y1
Value (in mm)
0.70
0.30
0.20
0.40
1.10
0.25
0.70
DMN65D8LFB
Document number: DS35545 Rev. 4 - 2
5 of 6
www.diodes.com
May 2015
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
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