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PDF DMN30H4D0LFDE Data sheet ( Hoja de datos )
| Número de pieza | DMN30H4D0LFDE | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN30H4D0LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
300V
RDS(ON)
4Ω @ VGS = 10V
4Ω @ VGS = 4.5V
6Ω @ VGS = 2.7V
ID
TA = +25°C
0.55A
0.55A
0.44A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
U-DFN2020-6
Features
• 0.6mm profile – ideal for low profile applications
• PCB footprint of 4mm2
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-DFN2020-6
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
• Weight: 0.0065 grams (approximate)
D
G
Bottom View
Pin Out
Bottom View
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN30H4D0LFDE-7
DMN30H4D0LFDE-13
Compliance
Standard
Standard
Case
U-DFN2020-6
U-DFN2020-6
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2H = Product Type Marking Code
2H YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2013
A
Jan
1
Feb
2
DMN30H4D0LFDE
Document number: DS36380 Rev. 4 - 2
2014
B
Mar
3
2015
C
Apr May
45
2016
D
Jun Jul
67
1 of 6
www.diodes.com
2017
E
Aug
8
Sep
9
2018
F
Oct
O
2019
G
Nov Dec
ND
May 2014
© Diodes Incorporated
1 page  
1 D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
DMN30H4D0LFDE
RθJA(t) = r(t) * RθJA
RθJA = 207°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100 1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
E E2
Z(4X)
A1 A3
D
b1 K1
D2
L1
L(2X)
K2
e b(6X)
U-DFN2020-6
Type E
Dim Min Max Typ
A 0.57 0.63 0.60
A1 0 0.05 0.03
A3 — — 0.15
b 0.25 0.35 0.30
b1 0.185 0.285 0.235
D 1.95 2.05 2.00
D2 0.85 1.05 0.95
E 1.95 2.05 2.00
E2 1.40 1.60 1.50
e — — 0.65
L 0.25 0.35 0.30
L1 0.82 0.92 0.87
K1 — — 0.305
K2 — — 0.225
Z — — 0.20
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y3 Y2
X2
X (6x)
DMN30H4D0LFDE
Document number: DS36380 Rev. 4 - 2
Y1
X1
C Y (2x)
5 of 6
www.diodes.com
Dimensions
C
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
May 2014
© Diodes Incorporated
5 Page | ||
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