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PDF DMN10H100SK3 Data sheet ( Hoja de datos )
| Número de pieza | DMN10H100SK3 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN10H100SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON) max
80mΩ @ VGS = 10V
100mΩ @ VGS = 4.5V
ID
TC = +25°C
18A
16A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Applications
Power Management Functions
DC-DC Converters
Features
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO252
D
Top View
D
GS
Top View
Pin Out
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN10H100SK3-13
Case
TO252
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO252
N100SK
YYWW
=Manufacturer’s Marking
N100SK= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
1 of 7
www.diodes.com
April 2015
© Diodes Incorporated
1 page  
DMN10H100SK3
1
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.7
D=0.9
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
RθJC(t)=r(t) * RθJC
RθJC=3.3℃/W
Duty Cycle, D=t1/ t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
1
10
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
5 of 7
www.diodes.com
April 2015
© Diodes Incorporated
5 Page | ||
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