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PDF RFPD3580 Data sheet ( Hoja de datos )
| Número de pieza | RFPD3580 | |
| Descripción | Hybrid Power Doubler amplifier module | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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RFPD3580
GaAs/GaN Power Doubler Hybrid
45MHz to 1218MHz
The RFPD3580 is a Hybrid Power Doubler amplifier module. The
part employs GaAs pHEMT die and GaN HEMT die and operates
from 45MHz to 1218MHz. It provides extremely high output up to
76.8dBmV composite power or 67dBmV virtual level. DC current as
well as supply voltage of the device can be externally adjusted for
optimum distortion performance versus power consumption over a
wide range of output level.
Current setting V+
INPUT
OUTPUT
Functional Block Diagram
RFMD + TriQuint = Qorvo
RFPD3580
Package: SOT-115J
Features
■ Extremely High Output
Capability
■ Excellent Linearity
■ Superior Return Loss
Performance
■ Optimal Reliability
■ Unconditionally Stable Under
All Terminations
■ 22.5dB Min. Gain at 1218MHz
■ 550mA Max.
■ Devices works at V+ between
24V and 34V
Applications
■ 45MHz to 1218MHz CATV
Amplifier Systems
■ DOCSIS 3.1 Compliant
Ordering Information
RFPD3580
Box with 50 pieces
Revision DS20160304
© 2016RF Micro Devices, Inc.
- 1 of 8 -
Disclaimer: Subject to change without notice
www.rfmd.com / www.qorvo.com
1 page  
RFPD3580
RFMD + TriQuint = Qorvo
Current Adjustment Using Hybrid Pin 4
The RFPD3580 can be operated over a wide range of current to provide maximum required performance with minimum current
consumption. A single external resistor connected between pin 4 and GND allows variation of current between 530mA and 130mA
(typ.). Within the recommended range of current between 530mA and 430mA gain (S21) change is less than 0.2dB and noise
figure change is less than 0.1dB. If pin 4 is not connected the device operates at maximum current, see table below.
Examples of connecting pin 4:
INPUT
1
V+
5
9 OUTPUT
Resistor,
fixed
4
2, 3, 7, 8
INPUT
1
V+
5
9 OUTPUT
4 2, 3, 7, 8
Resistor,
variable,
50k range,
or VCR
RFPD3580 current vs. external resistor
580
530
480
430
380
330
280
230
180
130
0
10 20 30 40
R(Pin4) [kOhm]
50
Device current [mA], External resistor [Ω]
typical
530 Open
520 50k
500 18k
475 9k3
425 4k3
400 3k9
350 1k9
250 700
130 0 (short)
V+ = 34V; TMB = 35°C;
ZS = ZL = 75Ω
Revision DS20160304
© 2016 RF Micro Devices, Inc.
- 5 of 8 -
Disclaimer: Subject to change without notice
www.rfmd.com / www.qorvo.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RFPD3580.PDF ] | |
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