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Teilenummer | ACE7407A |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | ACE Technology | |
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Gesamt 7 Seiten ACE7407A
P-Channel Enhancement Mode MOSFET
Description
The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side switching, and low
in-line power loss are needed in a very small outline surface mount package.
Features
• -20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V
• -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V
• -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V
• -20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V
• Super high density cell design for extremely low RDS (ON)
• Exceptional on-resistance and maximum DC current capability
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
VER 1.1 1
Packing Information
SOT-323
ACE7407A
P-Channel Enhancement Mode MOSFET
VER 1.1 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ ACE7407A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ACE7407A | P-Channel Enhancement Mode MOSFET | ACE Technology |
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