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PDF ACE7402M Data sheet ( Hoja de datos )
| Número de pieza | ACE7402M | |
| Descripción | N-Channel 30-V MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE7402M
N-Channel 30-V MOSFET
Description
The ACE7402M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
TA=25 OC
TA=70 OC
Pulse Drain Current b
Continuous Drain Current (Diode Continuous) a
Power Dissipation a
TA=25 OC
TA=70 OC
Operating Junction and Storage Temperature Range
VDS 30
VGS ±20
20
ID 16
IDM 50
IS 6.4
5
PD 3.2
TJ,TSTG -55 to 150
V
V
A
A
W
OC
Parameter
Maximum Junction-to-Ambient a
t≦10sec
Steady State
Symbol
RθJA
Maximum
25
65
Units
℃/W
℃/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
1 page  
Typical Performance Characteristics
ACE7402M
N-Channel 30-V MOSFET
Qg - Total Gate Charge (nC)
7. Gate Charge
TJ -JunctionTemperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V)
9. Safe Operating Area
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE7402M.PDF ] | |
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