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PDF ACE7402A Data sheet ( Hoja de datos )
| Número de pieza | ACE7402A | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE7402A
N-Channel Enhancement Mode MOSFET
Description
The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side switching, and low
in-line power loss are needed in a very small outline surface mount package.
Features
• 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V
• 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V
• 20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V
• Super high density cell design for extremely low RDS (ON)
• Exceptional on-resistance and maximum DC current capability
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
VER 1.1 1
1 page  
Typical Performance Characteristics
Source-Drain Diode Forward Voltage
ACE7402A
N-Channel Enhancement Mode MOSFET
On-Resistance vs. Gate-to-Source Voltage
VSD-Source-to-Drain Voltage (V)
Threshold Voltage
VGS-Gate-to-Source Voltage (V)
Single Pulse Power (Jumction-to-Ambient)
TJ-Temperature(℃)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration (sec)
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE7402A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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