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Teilenummer | ACE4940M |
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Beschreibung | Dual N-Channel 40-V MOSFET | |
Hersteller | ACE Technology | |
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Gesamt 7 Seiten ACE4940M
Dual N-Channel 40-V MOSFET
Description
The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 40 V
VGS ±20 V
8.3
ID
A
6.8
IDM 50 A
IS 3 A
2.1
PD
W
1.3
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.2 1
Packing Information
SOP-8
ACE4940M
Dual N-Channel 40-V MOSFET
MILLMETERS
DIM
MIN NOM MAX
A 1.35 1.55 1.75
A(1) 0.10 0.18 0.25
B 0.38 0.45 0.51
C 0.19 0.22 0.25
D 4.80 4.90 5.00
E 3.80 3.90 4.00
e 1.27 BSC
H 5.8 6.00 6.20
L 0.50 0.72 0.93
a 00 40 80
h 0.25 0.38 0.50
Unit: mm
VER 1.2 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ ACE4940M Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ACE4940M | Dual N-Channel 40-V MOSFET | ACE Technology |
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