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Teilenummer | D44C11 |
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Beschreibung | SILICON NPN POWER TRANSISTORS | |
Hersteller | Central Semiconductor | |
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Gesamt 2 Seiten D44C SERIES
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D44C series
devices are silicon NPN power transistors designed for
general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
ΘJC
ΘJA
D44C1 D44C4
D44C2 D44C5
D44C3 D44C6
40 55
D44C7
D44C8
D44C9
70
30 45
60
5.0
4.0
6.0
30
-65 to +150
4.2
75
D44C10
D44C11
D44C12
90
80
UNITS
V
V
V
A
A
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICES
VCE=Rated VCES
IEBO
VEB=5.0V
BVCEO
IC=100mA (D44C1, 2, 3)
30
BVCEO
IC=100mA (D44C4, 5, 6)
45
BVCEO
IC=100mA (D44C7, 8, 9)
60
BVCEO
IC=100mA (D44C10, 11, 12)
80
VCE(SAT) IC=1.0A, IB=50mA
(D44C2, 3, 5, 6, 8, 9, 11, 12)
VCE(SAT)
VBE(SAT)
Cob
fT
td+tr
ts
tf
IC=1.0A, IB=100mA (D44C1, 4, 7, 10)
IC=1.0A, IB=100mA
VCB=10V, IE=0, f=1.0MHz
VCE=4.0V, IC=20mA
IC=1.0A, IB1=100mA
IC=1.0A, IB1=IB2=100mA
IC=1.0A, IB1=IB2=100mA
50
100
500
75
MAX
10
100
0.5
0.5
1.3
100
UNITS
μA
μA
V
V
V
V
V
V
V
pF
MHz
ns
ns
ns
R1 (4-March 2014)
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ D44C11 Schematic.PDF ] |
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