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Teilenummer | RB411D |
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Beschreibung | SCHOTTKY BARRIER DIODE | |
Hersteller | JCET | |
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Gesamt 4 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
RB411D SCHOTTKY BARRIER DIODE
SOT-23
FEATURES
z Small Surface Mounting Type
z Low Reverse Current and Low Forward Voltage
z High Reliability
Marking: D3E
Maximum Ratings(Ta=25℃ unless otherwise noted)
Parameter
Peak repetitive reverse voltage
RMS reverse voltage
DC reverse voltage
Mean rectifying output current
Non-repetitive Peak Forward Surge
Current@t=8.3ms
Power Dissipation
Thermal Resistance Junction to
Ambient
Junction temperature
Storage temperature
Symbol
VRM
VR(RMS)
VR
IO
IFSM
PD
RθJA
Tj
Tstg
Limit
40
28
20
500
3
200
500
125
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VR
VF1
VF2
IR
CT
Min.
20
Typ.
20
Max.
0.3
0.5
30
Unit
V
V
V
μA
pF
www.cj-elec.com
1
Unit
V
V
V
mA
A
mW
℃/W
℃
℃
Condition
IR=100μA
IF=10mA
IF=500mA
VR=10V
VR=10V,f=1MHz
F,Oct,2015
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RB411D Schematic.PDF ] |
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