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RJH65T14DPQ-A0 Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJH65T14DPQ-A0
Beschreibung IGBT
Hersteller Renesas
Logo Renesas Logo 




Gesamt 10 Seiten
RJH65T14DPQ-A0 Datasheet, Funktion
RJH65T14DPQ-A0
650V - 50A - IGBT
Application: Induction Heating
Microwave Oven
Features
Optimized for current resonance application
Low collector to emitter saturation voltage
VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
Data Sheet
R07DS1256EJ0100
Rev.1.00
Mar 16, 2015
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
VCES
VGES
IC Note1
IC Note1
iC(peak) Note1
IDF
IDF
iDF(peak) Note2
PC
j-c Note3
j-cd Note3
Tj Note4
650
30
100
50
180
40
20
100
250
0.6
1.33
175
V
V
A
A
A
A
A
A
W
°C/W
°C/W
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
3. Value at Tc = 25C
4. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 1 of 9






RJH65T14DPQ-A0 Datasheet, Funktion
RJH65T14DPQ-A0
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
VGE = 0 V Tc = 25°C
f = 1 MHz
Cies
100
Coes
10 Cres
1
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
1000
800
Reverse Recovery Time vs.
Forward Current (Typical)
VCC = 300 V
diF/dt = 300 A/us
600
Tc = 150°C
400
25°C
200
0
0 20 40 60 80 100
Forward Current IF (A)
Dynamic Input Characteristics (Typical)
800
600
VCE
VCC = 480 V
300 V
120 V
VGE
16
12
400 8
200
0
0
VCC = 480 V
300 V
120 V
20 40 60
4
IC = 50 A
Ta = 25°C
0
80 100
Gate Charge Qg (nC)
Forward Current vs. Forward Voltage (Typical)
100
Tc = 25°C
80
150°C
60
40
20
VCE = 0 V
Pulse Test
0
01234
C-E Diode Forward Voltage VCEF (V)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 6 of 9

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