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Teilenummer | RB751S-40 |
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Beschreibung | Schottky barrier Diode | |
Hersteller | JCET | |
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Gesamt 4 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
RB751S-40 Schottky barrier Diode
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
SOD-523
MARKING: 5
2
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
Mean rectifying current
IO
Non-repetitive Peak Forward Surge
Current@t=8.3ms
Power dissipation
IFSM
PD
Thermal Resistance Junction to Ambient RθJA
Junction temperature
Tj
Storage temperature
Tstg
Limit
40
30
30
200
150
667
125
-55~+150
Unit
V
V
mA
mA
mW
℃/W
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
IR
CT
Min
Typ Max Unit
0.37 V
0.5 μA
2 pF
Conditions
IF=1mA
VR=30V
VR=1V,f=1MHZ
www.cj-elec.com
1
D,Mar,2015
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RB751S-40 Schematic.PDF ] |
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