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Teilenummer | RB751G-40 |
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Beschreibung | Schottky barrier Diode | |
Hersteller | JCET | |
Logo | ||
Gesamt 4 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-723 Plastic-Encapsulate Diodes
RB751G-40 Schottky barrier Diode
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
MARKING: 5
SOD-723
-
The marking bar indicates the cathode
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
Mean rectifying current
Non-repetitive Peak Forward Surge
Current@t=8.3ms
Power dissipation
Thermal Resistance Junction to Ambient
Junction temperature
IO
IFSM
PD
RθJA
Tj
Storage temperature
Tstg
Limit
40
30
30
200
150
667
125
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
IR
CT
Min Typ Max Unit
0.37 V
0.5 μA
2 pF
Unit
V
V
mA
mA
mW
℃/W
℃
℃
Conditions
IF=1mA
VR=30V
VR=1V,f=1MHZ
www.cj-elec.com
1
E,Mar,2015
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RB751G-40 Schematic.PDF ] |
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