(PDF) RB706F-40 Datasheet - Schottky barrier Diode

Número de pieza	RB706F-40
Descripción	Schottky barrier Diode
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 RB706F-40 Schottky Barrier Diode FEATURES z Small package z Low VF and low IR z High reliability MAKING: 3J· 1 3 2 Maximum Ratings @Ta=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation TJuhnercmtioanl RtoesAismtabniecnetfrom Junction temperature Storage temperature Solid dot = Green molding compound device,if none, the normal device. Symbol VRM VR IO IFSM PD RθJA Tj Tstg Limit 45 40 30 200 200 500 125 -55+150 Unit V V mA mA mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Forward voltage Reverse current Capacitance between terminals VF IR CT 0.37 V 1 μA 2 pF www.cj-elec.com 1 Conditions IF=1mA VR=10V VR=1V, f=1MHZ D,Oct,2015 1 page

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PDF RB706F-40 Data sheet ( Hoja de datos )