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PDF RB521G-30 Data sheet ( Hoja de datos )
| Número de pieza | RB521G-30 | |
| Descripción | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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RB521G-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power application
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
E
Top View
Marking Code: "E"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current (60 Hz for 1 cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
Reverse Current
at VR = 10 V
Symbol
VR
IO
IFSM
Tj
Ts
Value
30
100
1
125
- 40 to + 125
Unit
V
mA
A
OC
OC
Symbol
VF
IR
Max.
0.35
10
Unit
V
µA
Note: Please pay attention to static electricity when handling.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet RB521G-30.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RB521G-30 | SCHOTTKY BARRIER DIODE |  Pan Jit International |
| RB521G-30 | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE | SEMTECH |
| RB521G-30 | Schottky barrier Diode |  JCET |
| RB521G-30 | Schottky Barrier Diode |  MCC |
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