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8N90 Schematic ( Datenblatt PDF ) - Inchange Semiconductor

Teilenummer 8N90
Beschreibung N-Channel MOSFET Transistor
Hersteller Inchange Semiconductor
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Gesamt 2 Seiten
		
8N90 Datasheet, Funktion
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
8N90
·DESCRIPTION
·Drain Current ID= 8A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
900
±20
8
V
V
A
ID(puls)
Pulse Drain Current
32 A
Ptot Total Dissipation@TC=25
240 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.7 /W
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