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PDF ACE7331M Data sheet ( Hoja de datos )
| Número de pieza | ACE7331M | |
| Descripción | P-Channel 30-V MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE7331M
P-Channel 30-V MOSFET
Description
The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper lead frame DFN3x3-8L saves board space
• Fast switching speed
• High performance trench technology
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS -30 V
VGS ±20 V
-13.4
ID
-11.0
A
IDM ±50 A
IS -2.1 A
3.5
PD
W
2.0
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
35
81
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
1 page  
Typical Performance Characteristics
ACE7331M
P-Channel 30-V MOSFET
Qg - Total Gate Charge (nC)
7. Gate Charge Characteristics
VDS (V)
8. Capacitance Characteristics
TJ –Junction Temperature (°C)
9. Maximum Safe Operating Area
Pulse TIME (S)
10.Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
Square Wave Pulse Duration (s)
11. Transient Thermal Response Curve
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE7331M.PDF ] | |
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