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PDF ACE7332M Data sheet ( Hoja de datos )
| Número de pieza | ACE7332M | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE7332M
N-Channel 30-V (D-S) MOSFET
Description
The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a kelvin connection to the source, which may be used to bypass the source inductance.
Key Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Features
VDS(V)=30V
ID=15A (VGS=10V)
RDS(ON)＜8.5mΩ (VGS=10V)
RDS(ON)＜13mΩ (VGS=4.5V)
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
ID(A)
13 @ VGS = 10V
14
30
18 @ VGS = 4.5V
12
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) *AC
TA=25 OC
TA=70 OC
Drain Current (Pulse) *B
Power Dissipation
TA=25 OC
TA=70 OC
Operating and Storage Temperature Range
Symbol Max Unit
VDS 30 V
VGS ±20 V
15
ID 12 A
IDM 50
3.5
PD
W
2
TJ,Tstg -55 to 150 OC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
Symbol
RθJA
Max
35
81
Unit
°C/W
Packaging
DFN3x3-8L
TypeOrdering information
ACE7332M XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
VER 1.1 1
1 page  
Packing Information
DFN3*3-8L
ACE7332M
N-Channel 30-V (D-S) MOSFET
U
Unit: mm
VER 1.1 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ACE7332M.PDF ] | |
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