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Teilenummer | ACE4953B |
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Beschreibung | Dual P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | ACE Technology | |
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Gesamt 6 Seiten ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-20V
ID=-5.5A (VGS=-10V)
RDS(ON)<55mΩ (VGS=-10V)
RDS(ON)<58mΩ (VGS=-4.5V)
RDS(ON)<80mΩ (VGS=-2.5V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS
VGSS
ID
-20 V
±12 V
-5.5
A
-4.4
Drain Current (Pulse) * B
IDM -25 A
Power Dissipation
TA=25 OC
TA=70 OC
PD
2
W
1.5
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOP-8
VER 1.2 1
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2 6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ ACE4953B Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ACE4953B | Dual P-Channel Enhancement Mode Field Effect Transistor | ACE Technology |
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