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Teilenummer | ACE4922 |
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Beschreibung | Dual N-Channel Enhancement Mode MOSFET | |
Hersteller | ACE Technology | |
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Gesamt 7 Seiten ACE4922
Dual N-Channel Enhancement Mode MOSFET
Description
The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.
Features
N-Channel
20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS 20 V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=80℃
ID
1.2
A
0.9
Pulsed Drain Current
IDM 4 A
Continuous Source Current (Diode Conduction) IS
0.6 A
Power Dissipation
TA=25℃
TA=70℃
PD
0.35
W
0.19
Operating Junction Temperature
TJ -55/150 OC
Storage Temperature Range
TSTG -55/150 OC
VER 1.3 1
Packing Information
SC-70-6
ACE4922
Dual N-Channel Enhancement Mode MOSFET
VER 1.3 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ ACE4922 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ACE4922 | Dual N-Channel Enhancement Mode MOSFET | ACE Technology |
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