(PDF) ACE4908A Datasheet - Dual P-Channel Enhancement Mode MOSFET

Número de pieza	ACE4908A
Descripción	Dual P-Channel Enhancement Mode MOSFET
Fabricantes	ACE Technology
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No Preview Available ! ACE4908A Dual P-Channel Enhancement Mode MOSFET Description The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features • P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V • Super high density cell design for extremely low RDS (ON) • Exceptional on-resistance and maximum DC current capability APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter VER 1.1 1 1 page Typical Performance Characteristics ACE4908A Dual P-Channel Enhancement Mode MOSFET VER 1.1 5 5 Page

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PDF ACE4908A Data sheet ( Hoja de datos )