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PDF DS751-40WB Data sheet ( Hoja de datos )
| Número de pieza | DS751-40WB | |
| Descripción | Schottky barrier Diode | |
| Fabricantes | WILLAS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DS751-40WB (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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WILLAS
FM120-M+
DS751-40WBTHRU
WB1F.0ABSPU-R0FA2CCE MPOlUaNsTtSiCcH-OETnTKcYaBpAsRRuIElaRtReECDTIiFoIEdRSe-s20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
Schottky
b•aBbreraittetcerhr Dpr eriovocederesses
design, excellent power dissipation offers
leakage current and thermal resistance.
DESCRIPT• ILOowNprofile surface mounted application in order to
Silicon epi•taLoxopiwtaimlppiozwleaebnroalaorrsds,shpiagchee. fficiency.
• High current capability, low forward voltage drop.
FEATURE••SGHiugahrdsurirnggefocar
pability.
overvolt
age
prot
ect
ion.
z Small •suUrltfraacheigmh-ospuenetdinsgwittycphieng.
z Low re•vSeilrisceonceuprirtaexniat lapnladnalor wchifpo,rmweatardl sviloiclotangjuenction.
z
High
re• lLMiaeIbaLd-ilS-itfTryeDe-
parts meet
19500 /228
environmental
standards
of
• RoHS product for packing code suffix "G"
APPLICATMIHOeaNlcoghenafrneeicpraodludct
for
at
packing
a
code
suffix
"H"
High spee•dEspwoxitych: UinLg94f-oVr0dreatteedcftliaomne retardant
For portab•leCaesqeu:ipMmoledendt:p(il.aes.tiMc, oSbOiDle-1p2h3Hone,MP3, MD,CD-ROM,
DVD-ROM•,TNeromteinablos o:PklaPteCd,teertmci.n)als,
solderab
le
per
,
MIL-STD-750
Pb-Free packageMisethaovda20il2a6ble
Package outline
SOD-123H
WBFBP-02C
(1.0×0.6×00.1.456)(3.7)
unit: mm 0.130(3.3)
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
RoHS pro• dPoulcartitfyo:rInpdiacactkeidnbgy ccaothdoedesbuanffdix ”G”
Halogen •frMeoeunptirnogdPuoscittiofon r: Apnay cking code suffix “H”
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MARKING: 5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Ma xiFmorucampaRcitaivteinlogads,
derate current by 20%
and Electrical
RATINGS
CharacteSYriMsBtOicL sF,M1S20in-MgHlFeM1D30i-oMdH eFM@140T-MaH=F2M515℃0-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
Marking Code
12 13 14 15 16
Maximum RecPuarrreanmt PeetaekrReverse Voltage
SymbVoRlRM
20
30
40 Limits50
60
18 10
115 120
80
100Unit 150
200
PeaMkaxriemvuemrsReMvSoVltoaltgagee
Maximum DC Blocking Voltage
VRMVRMS
VDC
14
20
21
30
28 40 35
40 50
42
60
56
70 V 105
140
80 100 150 200
DCMraexvimerusmeAvvoerlatagge eForward Rectified Current
VR IO
30 1.0
V
MeaPsuenpaekrreiFmcoprtwoifsayeriddnSognurrcgaeuteCrdruelorrnaednt t(J8E.3DmECs sminegtlheohda) lf sine-wave IO IFSM
30 30
mA
PeaTkypfiocarlwTaherdrmsaul Rrgeseisctaunrcree(nNtote 2)
Typical Junction Capacitance (Note 1)
IFSMRCΘJJA
150
40
120
mA
PowOStpeoerraradgteiinsTgseiTmpeapmtepiroaetrnuarteurRe aRnagnege
PDTSTTJG
-55 to +125
100
- 65 to +175
-55 to +150
mW
Th ermal Resistance from
Junction to AmbienCtHARACTERISTICS
RθJA
1000
℃/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
JunMcatxiiomnumteFmorpwearradtVuorletage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Tj VF
IR
0.50 15 0.70
0.5
0.85 ℃
0.9
0.92
StoRraatgede DteCmBploeckriantguVreoltage
@T A=125℃ Tstg
-55~+150
10
℃
ElecN1-OtMrTieEcaSas:ulreRd aatt1inMgHZsa@nd Tapap=lie2d5re℃verse voltage of 4.0 VDC.
2- Thermal ResPisatarnacme FerotemrJunction to Ambient
Forward voltage
Symbol
VF
Min Typ
Max Unit
0.37 V
Conditions
IF=1mA
Reverse current
IR
0.5 μA
VR=30V
Capa2ci0ta1n2ce-0b6etween terminals
CT
2 pF VR=1V,f=1MHZ
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DS751-40WB.PDF ] | |
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