(PDF) DS751-40LED02 Datasheet - Schottky barrier diode

Número de pieza	DS751-40LED02
Descripción	Schottky barrier diode
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DS751-40LED02 Schottky barrier Diode DESCRIPTION Silicon epitaxial planar FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability APPLICATION High speed switching for detection For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 5 WBFBP-02C Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Non-repetitive Peak forward surge Current@t=8.3ms Power dissipation Thermal Resistance from Junction to Ambient Junction temperature Storage temperature Symbol VRM VR IO IFSM PD RθJA Tj Tstg Limits 40 30 30 150 100 1000 125 -55~+150 Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals www.cj-elec.com Symbol Min Typ Max Unit VF 0.37 V IR 0.5 μA CT 2 pF 1 Unit V V mA mA mW ℃/W ℃ ℃ Conditions IF=1mA VR=30V VR=1V,f=1MHZ E,Mar,2015 1 page

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PDF DS751-40LED02 Data sheet ( Hoja de datos )