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DIM1600FSS12-L000 Schematic ( PDF Datasheet ) - Dynex

Teilenummer DIM1600FSS12-L000
Beschreibung Single Switch IGBT Module
Hersteller Dynex
Logo Dynex Logo 




Gesamt 8 Seiten
DIM1600FSS12-L000 Datasheet, Funktion
DIM1600FSS12-L000
Single Switch IGBT Module
DS5968-1 August 2010 (LN27436)
FEATURES
10µs Short Circuit Withstand
Isolated Cu Base with Al2O3 Substrates
Optimised for high frequency operation
Lead Free construction
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
1200V
3.1V
1600A
3200A
* Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
High Power Inverters
Motor Controllers
Traction Drives
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1600FSS12-L000 is a single switch 1200V, n-
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
high frequency operation.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
7(C)
8(G)
1(C)
2(C)
9(E)
3(E)
4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1600FSS12-L000
Note: When ordering, please use the complete part
number
Outline type code: F
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8






DIM1600FSS12-L000 Datasheet, Funktion
DIM1600FSS12-L000
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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