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Teilenummer | DAP222 |
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Beschreibung | SWITCHING DIODE | |
Hersteller | JCET | |
Logo | ||
Gesamt 4 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
DAP222 SWITCHING DIODE
FEATURES:
z High speed
z Suitable for high packing density layout
z High reliability
MARKING: P
SOT-523
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Average Rectified Output Current
Power Dissipation
Thermal resistance From Junction to ambient
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IFSM
IO
PD
RθJA
TJ
TSTG
Limit
80
80
300
2.0
100
150
833
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
Test conditions
V(BR)
IR= 100μA
IR VR=70V
Min Max
80
0.1
Forward voltage
Diode capacitance
Reverse recovery time
VF IF=100mA
CD VR=6V, f=1MHz
trr VR=6V, IF=IR=5mA
1.2
3.5
4
Unit
V
V
mA
A
mA
mW
℃/W
℃
℃
Unit
V
μA
V
pF
ns
www.cj-elec.com
1
B,Oct,2014
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ DAP222 Schematic.PDF ] |
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