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PDF D2527 Data sheet ( Hoja de datos )
| Número de pieza | D2527 | |
| Descripción | NPN Transistor - 2SD2527 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD2527
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
80
60
6
8
4
1
40
2.0
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
ICBO
ICEO
IEBO
VCEO
hFE*
VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.8A
100 µA
100 µA
100 µA
60 V
500 2000
Collector to emitter saturation voltage
Transition frequency
Storage time
VCE(sat)
fT
tstg
IC = 3A, IB = 0.075A
VCE = 12V, IC = 0.3A, f = 10MHz
IC = 3A, IB1 = 0.06A, IB2 = – 0.06A, VCC = 50V
0.7 V
30 MHz
20 µs
*hFE Rank classification
Rank
Q
P
hFE 500 to 1200 800 to 2000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D2527.PDF ] | |
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