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PDF CHV2243 Data sheet ( Hoja de datos )
| Número de pieza | CHV2243 | |
| Descripción | Fully Integrated Q-band VCO based on Ku-band Oscillator and Q-band Multiplier | |
| Fabricantes | United Monolithic Semiconductors | |
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CHV2243
Fully Integrated Q-band VCO
based on Ku-band Oscillator and Q-band Multiplier
GaAs Monolithic Microwave IC
Description
The CHV2243 is a monolithic multifunction
for frequency generation. It integrates a
Ku-band oscillator with frequency control
(VCO), a Q-band frequency multiplier and
buffer amplifiers. The VCO is fully
integrated. On chip P-HEMT based
Schottky diode is used as varactor. All the
active devices are internally self biased.
The circuit is manufactured with the P-
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is available in chip form.
Main Features
n Ku-band VCO + Q-band multiplier
n Fully integrated VCO
n Wide frequency tuning range
n PLL oriented
n Auxiliary output at VCO frequency
n High temperature range
n On-chip self biasing
n Automatic assembly oriented
n Chip size 2.41 x 1.18 x 0.1 mm
+V -V
F_VCO = F_out/3
x3
RF_out
(F_out)
V_tune
VCO_out_aux
40
39,5
39
38,5
38
37,5
37
36,5
0
Multifunction block diagram
0,5 1 1,5
Tuning voltage (V)
Typical tuning characteristic
2
Main Characteristics
Tamb = +25°C
Symbol
F_out
F_vco
F_tune1
Pout
Parameter
Output centre frequency
Oscillator frequency
Output frequency tuning range
Output power
Min Typ Max Unit
38 38.25 38.5 GHz
F_out/3
1.5 3
GHz
57
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHV22431074 -15-Mar.-01
1/6 Specifications subject to change without notice
united monolithic semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page  
Q-band VCO
Typical Assembly and Bias Configuration
DC and control lines
-V +V
V-tune
>= 120pF
CHV2243
1 2 3 45 6 78
9
15
10 11
12
13
14
µ-strip line
L_ out
L_aux
µ-strip line
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. The positive and negative voltages can be
respectively connected together (see drawing) according to the recommended
values given in the electrical characteristics table.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) has to
be according to the following recommendation.
Port
Equivalent inductance
(nH)
RF_out (13)
VCO_out_aux (15)
L_out = 0.28
L_aux = 0.4
Approximated wire
length (mm)
0.35
0.5
For a micro-strip configuration a hole in the substrate is recommended for chip
assembly.
Ref. : DSCHV22431074 -15-Mar.-01
5/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CHV2243.PDF ] | |
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