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PDF CHU2277 Data sheet ( Hoja de datos )
| Número de pieza | CHU2277 | |
| Descripción | W-band Multifunction : Multiplier / MPA | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CHU2277 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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CHU2277
W-band Multifunction : Multiplier / MPA
GaAs Monolithic Microwave IC
Description
The CHU2277 is a W-band monolithic
multifunction which integrates a frequency
multiplier, a four-stage amplifier and a power
divider. The frequency multiplier is based on an
active transistor and allows to operate at low
input level with a reduced power consumption.
This chip provides two outputs at 77GHz, the
main one is for the transmission path and the
auxiliary one for the receiving mixer (s) LO
signal. All the active devices are internally self
biased. This chip is compatible with automatic
equipment for assembly.
The circuit is manufactured with the P-HEMT
process : 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
n Wide operating frequency range
n Low input power : 5dBm typical
n High output power (OUT1)
n Auxiliary output power (OUT2)
n Low AM noise
n High temperature range
n On-chip self biasing
n Automatic assembly oriented
n Low DC power consumption
n Chip size : 4.65 x 1.6 x 0.1mm
Main Characteristics
Tamb = +25°C
+V -V
IN
x2
OUT1
OUT2
W-band multifunction block-diagram
20
18
16 OUT1
14
12
10
8
6 OUT2
4
2
0
75 75,5 76 76,5 77 77,5 78 78,5
Output frequency (GHz)
Typical output power characteristic
Pin = 7dBm
(on wafer measurement)
79
Symbol
F_in
F_out
P_out1
P_out2
Parameter
Input frequency
Output frequency
Main output power
Auxiliary output power
Min Typ Max
38 38.5
76 77
13
10
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Unit
GHz
GHz
dBm
dBm
Ref. DSCHU22771074 -15-Mar.-01
1/7 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page  
W-band Multiplier/MPA
Typical Assembly and Bias Configuration
µ-strip line
CHU2277
L_in
µ-strip line
3
2
1
12 11 10
L_out1
46
5
L_out2
7
8
9 µ-strip line
>= 120pF
>= 120pF
-V
DC lines
+V
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. An external capacitor is recommended for
the positive and negative supply voltages.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) have
to be according to the following recommendation.
Port
IN (2)
OUT1 (5)
OUT2 (8)
Equivalent inductance
(nH)
L_in = 0.32
L_out1 = 0.32
L_out2 = 0.32
Wire length (mm)
(1)
0.4
0.4
0.4
(1) This value is the total length including the necessary loop from pad to
pad.
For a micro-strip configuration a hole in the substrate is necessary for chip
assembly.
Ref. DSCHU22771074 -15-Mar.-01
5/7 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CHU2277.PDF ] | |
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