|
|
Teilenummer | 3DD8D |
|
Beschreibung | Silicon NPN Power Transistor | |
Hersteller | Inchange Semiconductor | |
Logo | ||
Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD8D
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2V(Max) @IC= 5A
APPLICATIONS
·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
110 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=75℃
TJ Junction Temperature
Tstg Storage Temperature Range
15 A
100 W
175 ℃
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.0 ℃/W
isc website:www.iscsemi.cn
1
| ||
Seiten | Gesamt 2 Seiten | |
PDF Download | [ 3DD8D Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
3DD8A | Silicon NPN Power Transistor | Inchange Semiconductor |
3DD8B | Silicon NPN Power Transistor | Inchange Semiconductor |
3DD8C | Silicon NPN Power Transistor | Inchange Semiconductor |
3DD8D | Silicon NPN Power Transistor | Inchange Semiconductor |
3DD8E | Silicon NPN Power Transistor | Inchange Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |