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Teilenummer | 3DD7B |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD7B
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A
APPLICATIONS
·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=75℃
TJ Junction Temperature
Tstg Storage Temperature Range
7.5 A
75 W
175 ℃
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.33 ℃/W
isc website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 3DD7B Schematic.PDF ] |
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