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3DD15A Schematic ( PDF Datasheet ) - Inchange Semiconductor

Teilenummer 3DD15A
Beschreibung Silicon NPN Power Transistor
Hersteller Inchange Semiconductor
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Gesamt 2 Seiten
3DD15A Datasheet, Funktion
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD15A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·DC Current Gain-
: hFE= 30~250(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for B&W TV horizontal output , regulated power
supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=7550
W
TJ Junction Temperature
175
Tstg Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 /W
isc websitewww.iscsemi.cn
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