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Teilenummer | GA10JT06-CAL |
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Beschreibung | OFF Silicon Carbide Junction Transistor | |
Hersteller | GeneSiC | |
Logo | ||
Gesamt 9 Seiten Die Datasheet
GA10JT06-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
• 210°C maximum operating temperature
• Gate Oxide Free SiC switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Co-efficient of RDS,ON
• Suitable for connecting an anti-parallel diode
VDS
RDS(ON)
ID @ 25 oC
hFE
=
=
=
=
600 V
120 mΩ
25 A
120
Die Size = 2.10 mm x 2.10 mm
Advantages
• Compatible with Si MOSFET/IGBT gate-drivers
• > 20 µs Short-Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Absolute Maximum Ratings (TC = 25 oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
VDS
ID
ID
IGM
RBSOA
SCSOA
VGS = 0 V
TC = 25°C
TC > 125°C, assumes RthJC < 0.88 oC/W
TVJ = 210 oC,
Clamped Inductive Load
TVJ = 210 oC, IG = 1 A, VDS = 400 V,
Non Repetitive
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Operating Junction and Storage
Temperature
VSG
VSD
Tj, Tstg
Maximum Processing Temperature
TProc
10 min. maximum
Value
600
25
10
1.3
ID,max = 10
@ VDS ≤ VDSmax
> 20
30
25
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Notes
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
RDS(ON)
VGS,SAT
hFE
ID = 10 A, Tj = 25 °C
ID = 10 A, Tj = 125 °C
ID = 10 A, Tj = 175 °C
ID = 10 A, Tj = 210 °C
ID = 10 A, ID/IG = 40, Tj = 25 °C
ID = 10 A, ID/IG = 30, Tj = 175 °C
VDS = 5 V, ID = 10 A, Tj = 25 °C
VDS = 5 V, ID = 10 A, Tj = 125 °C
VDS = 5 V, ID = 10 A, Tj = 175 °C
VDS = 10 V, ID = 10 A, Tj = 210 °C
VR = 600 V, VGS = 0 V, Tj = 25 °C
IDSS VR = 600 V, VGS = 0 V, Tj = 125 °C
VR = 600 V, VGS = 0 V, Tj = 210 °C
ISG VSG = 20 V, Tj = 25 °C
Min.
Value
Typical
Max. Unit
Notes
120
180
240
mΩ Fig. 5
320
3.50
3.27
V Fig. 4
120
87
80
– Fig. 5
76
10
50 μA Fig. 6
100
20 nA
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 8
Die Datasheet
GA10JT06-CAL
C: Proportional Gate Current Driving
For applications in which the GA10JT06- CAL will operate over a wide range of drain current conditions, it may be beneficial to drive the
device using a proportional gate drive topology to optimize gate drive power consumption. A proportional gate driver relies on instantaneous
drain current ID feedback to vary the steady state gate current IG,steady supplied to the GA10JT06- CAL
C:1: Voltage Controlled Proportional Driver
The voltage controlled proportional driver relies on a gate drive IC to detect the GA10JT06- CAL drain-source voltage VDS during on-state to
sense ID. The gate drive IC will then increase or decrease IG,steady in response to ID. This allows IG,steady, and thus the gate drive power
consumption, to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A high voltage diode connected between the
drain and sense protects the IC from high-voltage when the driver and GA10JT06- CAL are in off-state. A simplified version of this topology is
shown in Figure13, additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Gate Signal
Sense
Proportional
Gate Current
Driver
Signal
Output
HV Diode
IG,steady
G
SiC SJT
D
S
Figure 13: Simplified Voltage Controlled Proportional Driver
C:2: Current Controlled Proportional Driver
The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback ID of the GA10JT06-
CAL during on-state to supply IG,steady into the device gate. IG,steady will then increase or decrease in response to ID at a fixed forced current gain
which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. GA10JT06- CAL is initially tuned-on using a gate current pulse
supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady, and thus the gate drive power consumption,
to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A simplified version of this topology is shown in Figure14,
additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/.
Feb 2015
Gate Signal
N2
SiC SJT D
G
S
N3 N1
N2
Figure 14: Simplified Current Controlled Proportional Driver
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg6 of 8
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ GA10JT06-CAL Schematic.PDF ] |
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