|
|
PDF EMA06N03AN Data sheet ( Hoja de datos )
| Número de pieza | EMA06N03AN | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMA06N03AN (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMA06N03AN
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
80
50
170
53
140
40
69
27
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
1.8
°C / W
75
2013/8/21
p.1
1 page  
G A T E C H A R G E C H A R A C T E R IS T IC S
12
ID = 3 0 A
10
8
6
4
V DS =5V
15V
10V
2
0
0 15 30
45
Q g ,G A T E C H A R G E ( n C )
300
200
100
R d s ( o n ) Limit
50
20
10
5
MAXIMUM SAFE OPERATING AREA
10μ s
100μ s
1ms
10ms
D1C00ms
2
1
0.5
0.5
VG S = 10V
RSIθ N J C G= L1E. 8P° UC/LWSE
Tc = 25° C
1 10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
1
Duty Cycle = 0.5
0.5
Transient Thermal Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1 10
t 1 ,Time ( mSEC )
1.Duty Cycle,D =
t1
t2
2.Rθ J C =1.8°C/W
3.TJ ‐ T C = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
2013/8/21
EMA06N03AN
10 4
C A P A C IT A N C E C H A R A C T E R IS T IC S
10 3
10 2
C iss
C o ss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D R A IN ‐S O U R C E V O L T A G E ( V )
30
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SRθI N JC G= L1E. 8P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1
10 100
SINGLE PULSE TIME ( mSEC )
1000
1000
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMA06N03AN.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMA06N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |