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Teilenummer | 3DD325 |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD325
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max) @IC= 0.5A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
VCEO
VEBO
Collector-Base Voltage
3DD325A
Collector-Emitter Voltage
3DD325B
Emitter-Base Voltage
50
30
50
4
V
V
V
IC Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 A
1.8
W
25
150 ℃
-55~150 ℃
isc website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 3DD325 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
3DD325 | Silicon NPN Power Transistor | Inchange Semiconductor |
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