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3DD325 Schematic ( PDF Datasheet ) - Inchange Semiconductor

Teilenummer 3DD325
Beschreibung Silicon NPN Power Transistor
Hersteller Inchange Semiconductor
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Gesamt 2 Seiten
3DD325 Datasheet, Funktion
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD325
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max) @IC= 0.5A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
VCEO
VEBO
Collector-Base Voltage
3DD325A
Collector-Emitter Voltage
3DD325B
Emitter-Base Voltage
50
30
50
4
V
V
V
IC Collector Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 A
1.8
W
25
150
-55~150
isc websitewww.iscsemi.cn
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