DataSheet.es    


PDF CMT07N60 Data sheet ( Hoja de datos )

Número de pieza CMT07N60
Descripción POWER FIELD EFFECT TRANSISTOR
Fabricantes ETC 
Logotipo ETC Logotipo



Hay una vista previa y un enlace de descarga de CMT07N60 (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! CMT07N60 Hoja de datos, Descripción, Manual

CMT07N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
!
!
!
!
!
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
Front View
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25)
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) VDD = 50V, ID = 10A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
7.0
20
±20
±40
147
50
-55 to 150
245
1.0
62.5
260
Unit
A
V
V
W
mJ
/W
2003/06/19 Preliminary Rev. 1.0 Champion Microelectronic Corporation
Page 1

1 page




CMT07N60 pdf
CMT07N60
POWER FIELD EFFECT TRANSISTOR
2003/06/19 Preliminary Rev. 1.0 Champion Microelectronic Corporation
Page 5

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet CMT07N60.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
CMT07N60POWER FIELD EFFECT TRANSISTORETC
ETC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar