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PDF CMT04N60 Data sheet ( Hoja de datos )
| Número de pieza | CMT04N60 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ETC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CMT04N60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
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Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
TO-220/TO-220FP
Top View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current － Continuous
－ Pulsed
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω)
Thermal Resistance － Junction to Case
－ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
4.0
14
±20
±40
96
38
-55 to 150
80
1.30
100
260
Unit
A
V
V
W
℃
mJ
℃/W
℃
2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation
Page 1
1 page  
CMT04N60
POWER MOSFET
TO-220
TO-220FP
2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation
Page 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CMT04N60.PDF ] | |
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