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Teilenummer | C5812 |
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Beschreibung | NPN Transistor - 2SC5812 | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 10 Seiten 2SC5812
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE-208-1468(Z)
Rev.0
Nov. 2001
Features
• High power gain, Low noise figure at low power operation:
|S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
Outline
MFPAK
Note: Marking is “WG–“.
3
1
2
1. Emitter
2. Base
3. Collector
2SC5812
S11 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5
–10
–.2
–.4
–.6
–.8 –1
–5
–4
–3
–2
–1.5
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S21 Parameter vs. Frequency
90° Scale: 8 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S12 Parameter vs. Frequency
90° Scale: 0.04 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S22 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5
–10
–.2
–.4
–.6
–.8 –1
–5
–4
–3
–2
–1.5
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
Rev.0, Nov. 2001, page 6 of 10
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ C5812 Schematic.PDF ] |
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