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DPH30IS600HI Schematic ( PDF Datasheet ) - IXYS

Teilenummer DPH30IS600HI
Beschreibung High Performance Fast Recovery Diode
Hersteller IXYS
Logo IXYS Logo 




Gesamt 4 Seiten
DPH30IS600HI Datasheet, Funktion
DPH 30 IS 600 HI
HiPerDynFRED²
High Performance Dynamic Fast Recovery Diode
Extreme Low Loss and Soft Recovery
Single Diode
Part number
1
DPH 30 IS 600 HI
3
VRRM =
IFAV =
t rr =
600 V
30 A
35 ns
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Backside: isolated
Package:
Housing: ISOPLUS247
rIndustry standard outline
rDCB isolated backside
rIsolation Voltage 3000 V
rEpoxy meets UL 94V-0
rRoHS compliant
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR = 600 V
VR = 600 V
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
rectangular
d = 0.5
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
t = 10 ms (50 Hz), sine
IF = 30 A; VR = 400 V
-diF/dt = 200 A/µs
CJ junction capacitance
VR = 400 V; f = 1 MHz
TVJ = 25 °C
TVJ = 25°C
TVJ = 150 °C
TVJ = 25°C
TVJ = 150°C
TC = 140°C
TVJ = 175 °C
TC = 25°C
TVJ = 45°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
Ratings
min. typ. max.
600
1
0.2
2.48
3.02
1.89
2.45
30
1.10
12.6
0.55
-55 175
285
450
3
8
35
65
30
Unit
V
µA
mA
V
V
V
V
A
V
m
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100126a





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