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Teilenummer | GB20B60PD1 |
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Beschreibung | IRGB20B60PD1 | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 10 Seiten PD - 94613A
SMPS IGBT IRGB20B60PD1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A
Equivalent MOSFET
Parameters
RCE(on) typ. = 158mΩ
ID (FET equivalent) = 20A
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
GCE
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
600
40
22
80
80
10
4
16
±20
215
86
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
0.58
5.0
–––
80
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1 www.irf.com
12/10/03
IRGB20B60PD1
50
45 IF = 8.0A
IF = 4.0A
40
35
30
25
VR = 200V
TJ = 125°C
TJ = 25°C
20
100
di f /dt - (A/µs)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
200
VR = 200V
TJ = 125°C
TJ = 25°C
160
IF = 8.0A
120 IF = 4.0A
80
40
0
100
di f /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
14
VR = 200V
TJ = 125°C
12 TJ = 25°C
I F = 8.0A
10
IF = 4.0A
8
6
4
2
0
100 1000
dif /dt - (A/µs)
Fig. 20 - Typical Recovery Current vs. dif/dt
1000
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 8.0A
I F = 4.0A
100
100
di f /dt - (A/µs)
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
A
1000
6 www.irf.com
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ GB20B60PD1 Schematic.PDF ] |
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