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PDF DMC3036LSD Data sheet ( Hoja de datos )
| Número de pieza | DMC3036LSD | |
| Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMC3036LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Mechanical Data
• Complementary Pair MOSFETs
• Low On-Resistance
• N-Channel: 36mΩ @ 10V
61mΩ @ 4.5V
• P-Channel: 36mΩ @ -10V
• 64mΩ @ -4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.072g (approximate)
SOP-8L
D2
D1
S2 D2
G2 D2 G2
S1 D1
G1 D1
G1
TOP VIEW
TOP VIEW
Internal Schematic
S2
N-Channel MOSFET
Maximum Ratings N-CHANNEL @TA = 25°C unless otherwise specified
S1
P-Channel MOSFET
Drain Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
6.9
5.8
24
Unit
V
V
A
A
Maximum Ratings P-CHANNEL
Drain Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@TA = 25°C unless otherwise specified
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-30
±20
-6
-5
-21
Unit
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, on 2oz. Copper pads with RθJA = 50°C/W.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMC3036LSD
Document number: DS31311 Rev. 4 - 2
1 of 7
www.diodes.com
October 2008
© Diodes Incorporated
1 page  
DMC3036LSD
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
1
0.1
VGS = -10V
P-CHANNEL
30
24
VDS = 5V
Pulsed
VGS = -4.5V
18
TA = -55°C
TA = 25°C
TA = 85°C
TA = 125°C
TA = 150°C
VGS = -2.5V
VGS = -2.0V
VGS = -3.5V
VGS = -3.0V
1234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Output Characteristics
5
VGS = -4.5V
12
6
0
1
0.1
0.08
0.06
2 3 45
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 11 Typical Transfer Characteristics
6
VGS = -4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.04
TA = -55°C
VGS = -10V
0.02
0.01
0
5 10 15 20 25 30
-ID, DRAIN-SOURCE CURRENT (A)
Fig 12 On-Resistance vs. Drain Current & Gate Voltage
1.6
0
0 2 4 6 8 10
-ID, DRAIN-SOURCE CURRENT (A)
Fig 13 On-Resistance vs. Drain Current & Temperature
2.5
1.4 2.0
ID = 1mA
1.2 1.5
ID = -250µA
1.0 VGS = -10V
ID = -10A
1.0
0.8
VGS = -4.5V
ID = -5A
0.6
-50
-25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 14 Static Drain-Source On-Resistance
vs. Ambient Temperature
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 15 Gate Threshold Variation vs. Ambient Temperature
DMC3036LSD
Document number: DS31311 Rev. 4 - 2
5 of 7
www.diodes.com
October 2008
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMC3036LSD.PDF ] | |
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