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PDF AP5321GM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP5321GM-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP5321GM-HF (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Advanced Power
Electronics Corp.
AP5321GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D2
D2
D1
D1
▼ Halogen Free & RoHS Compliant Product
SO-8
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
100V
150mΩ
2.5A
Description
AP5321 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G1
D1
G2
D2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
S1 S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
100 V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
2.5 A
2A
10 A
PD@TA=25℃
Total Power Dissipation
2W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501122
1 page  
MARKING INFORMATION
AP5321GM-HF
5321GM
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP5321GM-HF.PDF ] | |
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