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Número de pieza | AP4961GM | |
Descripción | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP4961GM (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP4961GM
RoHS-compliant Product
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Dual P MOSFET Package
D2
D2
D1
D1
SO-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
G2
S2
G1
S1
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
-20V
28mΩ
-7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
+8
-7
-5.5
-20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201101192
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP4961GM.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP4961GM | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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