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Teilenummer | D1481 |
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Beschreibung | NPN Transistor - 2SD1481 | |
Hersteller | NEC | |
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Gesamt 4 Seiten www.DataSheet4U.com
DATA SHEET
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• On-chip C-to-B Zener diode for surge voltage absorption
• Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A)
• Ideal for use in a direct drive from IC to the devices such as OA
and FA equipment and motor solenoid relay printer head drivers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC(DC)
Collector current
IC(pulse)*
Base current
Total power dissipation
IB(DC)
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 300 µs, duty cycle ≤ 10%
Ratings
60 ±10
60 ±10
7.0
2.0
4.0
0.2
15
1.5
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16189EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ D1481 Schematic.PDF ] |
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